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Articles (151)
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1

Influence of a Low-Temperature GaAs Dislocation Filter on the Perfection of GaAs/Si Layers

Abramkin, D. S., Petrushkov, M. O., Emel’yanov, E. A., Putyato, M. A., Semyagin, B. R., Vasev, A. V., Esin, M. Yu., Loshkarev, I. D., Gutakovskii, A. K., Preobrazhenskii, V. V., Shamirzaev, T. S.

Journal:

Optoelectronics, Instrumentation and Data Processing

Année:

2018

Langue:

english

Fichier:

PDF, 282 KB

english, 2018

2

Electron microscopy of GaAs Structures with InAs and as quantum dots

V. N. Nevedomskii, N. A. Bert, V. V. Chaldyshev, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

Journal:

Année:

2011

Langue:

english

Fichier:

PDF, 432 KB

english, 2011

3

Photodiode properties of molecular beam epitaxial InSb on a heavily doped substrate

Sun, Weiguo, Fan, Huitao, Peng, Zhenyu, Zhang, Liang, Zhang, Xiaolei, Zhang, Lei, Lu, Zhengxiong, Si, Junjie, Emelyanov, E., Putyato, M., Semyagin, B., Pchelyakov, O., Preobrazhenskii, V.

Journal:

Infrared Physics & Technology

Année:

2014

Langue:

english

Fichier:

PDF, 743 KB

english, 2014

4

As barriers

Pusep, Yu. A., da Silva, S. W., Galzerani, J. C., Milekhin, A. G., Preobrazhenskii, V. V., Semyagin, B. R., Marahovka, I. I.

Journal:

Physical Review B

Année:

1995

Langue:

english

Fichier:

PDF, 392 KB

english, 1995

5

High-power, efficient, semiconductor saturable absorber mode-locked Yb:KGW bulk laser

Kisel, V. E., Rudenkov, A. S., Pavlyuk, A. A., Kovalyov, A. A., Preobrazhenskii, V. V., Putyato, M. A., Rubtsova, N. N., Semyagin, B. R., Kuleshov, N. V.

Journal:

Année:

2015

Langue:

english

Fichier:

PDF, 1.45 MB

english, 2015

6

Cyclotron resonance of dirac fermions in InAs/GaSb/InAs quantum wells

Krishtopenko, S. S., Ikonnikov, A. V., Maremyanin, K. V., Bovkun, L. S., Spirin, K. E., Kadykov, A. M., Marcinkiewicz, M., Ruffenach, S., Consejo, C., Teppe, F., Knap, W., Semyagin, B. R., Putyato, M.

Journal:

Année:

2017

Langue:

english

Fichier:

PDF, 285 KB

english, 2017

7

[IEEE 2019 20th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM) - Erlagol (Altai Republic), Russia (2019.6.29-2019.7.3)] 2019 20th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM) - MBE of InAsSb Solid Solutions on Misoriented GaAs(100) Substrates: Experiment and Kinetic Analysis

Emelyanov, Eugene A., Petrushkov, Mikhail O., Putyato, Mikhail A., Vasev, Andrei V., Semyagin, Boris R., Preobrazhenskii, Valerii V.

Année:

2019

Langue:

english

Fichier:

PDF, 465 KB

english, 2019

8

115 fs pulses from Yb3+:KY(WO4)2 laser with low loss nanostructured saturable absorber

A.A. Kovalyov, V.V. Preobrazhenskii, M.A. Putyato, O.P. Pchelyakov, N.N. Rubtsova, B.R. Semyagin, V.E. Kisel', S.V. Kuril'chik, N.V. Kuleshov

Journal:

Laser Physics Letters

Année:

2011

Langue:

english

Fichier:

PDF, 120 KB

english, 2011

9

Raman study of confined TO phonons in GaAs/AlAs superlattices grown on GaAs (311)A and B surfaces

V.A. Volodin, M.D. Efremov, V.V. Preobrazhenskii, B.R. Semyagin, V.V. Bolotov

Journal:

Superlattices and Microstructures

Année:

1999

Langue:

english

Fichier:

PDF, 116 KB

english, 1999

10

Evidence for interlayer donor–acceptor recombination in type II GaAs/AlAs superlattices

K.S. Zhuravlev, D.A. Petrakov, A.M. Gilinsky, T.S. Shamirzaev, V.V. Preobrazhenskii, B.R. Semyagin, M.A. Putyato

Journal:

Superlattices and Microstructures

Année:

2000

Langue:

english

Fichier:

PDF, 160 KB

english, 2000

11

Structural study of low-temperature grown superlattices of GaAs with delta-layers of Sb and P

M.V. Baidakova, N.A. Bert, V.V. Chaldyshev, V.N. Nevedomsky, M.A. Yagovkina, V.V. Preobrazhenskii, M.A. Putyato, B.R. Semyagin

Journal:

Physica B: Condensed Matter

Année:

2009

Langue:

english

Fichier:

PDF, 302 KB

english, 2009

12

Atomic-scale characterization of interfaces in the GaAs/AlGaAs superlattices

Yu.A. Pusep, S.W. da Silva, J.C. Galzerani, D.I. Lubyshev, P. Basmaji, A.G. Milekhin, V.V. Preobrazhenskii, B.R. Semyagin, I.I. Marahovka

Journal:

Materials Science and Engineering: B

Année:

1995

Langue:

english

Fichier:

PDF, 314 KB

english, 1995

13

Structure and photoluminescence study of type-II GaAs quantum wires and dots grown on nano-faceted (3 1 1)A surface

M.D Efremov, V.A Volodin, V.A Sachkov, V.V Preobrazhenskii, B.R Semyagin, D.V Marin, R.S Matvienko, N.N Ledentsov, I.P Soshnikov, D Litvinov, A Rosenauer, D Gerthsen

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Année:

2004

Langue:

english

Fichier:

PDF, 371 KB

english, 2004

14

Ellipsometric detection of transitional surface structures on decapped GaAs

A.V. Vasev, S.I. Chikichev, B.R. Semyagin

Journal:

Surface Science

Année:

2005

Langue:

english

Fichier:

PDF, 496 KB

english, 2005

15

InGaAsP/InGaP superlattices by conventional MBE with molten metal solution phosphorus source

M.A Putyato, V.V Preobrazhenskii, B.R Semyagin, Yu.B Bolkhovityanov, A.M Gilinsky, A.K Gutakousky, M.A Revenko, O.P Pchelyakov, D.F Feklin

Journal:

Journal of Crystal Growth

Année:

2003

Langue:

english

Fichier:

PDF, 351 KB

english, 2003

16

Experimental determination of the incorporation factor of As4 during molecular beam epitaxy of GaAs

V.V Preobrazhenskii, M.A Putyato, O.P Pchelyakov, B.R Semyagin

Journal:

Journal of Crystal Growth

Année:

1999

Langue:

english

Fichier:

PDF, 119 KB

english, 1999

17

Surface structure transitions on (0 0 1) GaAs during MBE

V.V Preobrazhenskii, M.A Putyato, O.P Pchelyakov, B.R Semyagin

Journal:

Journal of Crystal Growth

Année:

1999

Langue:

english

Fichier:

PDF, 108 KB

english, 1999

18

Ordered arrays of arsenic clusters coincided with InAs/GaAs superlattices grown by low-temperature MBE

V.V Chaldyshev, N.N Faleev, N.A Bert, Yu.G Musikhin, A.E Kunitsyn, V.V Preobrazhenskii, M.A Putyato, B.R Semyagin, P Werner

Journal:

Journal of Crystal Growth

Année:

1999

Langue:

english

Fichier:

PDF, 187 KB

english, 1999

19

Raman study of GaAs quantum wires grown with partial filling of corrugated (311)A AlAs surfaces

M.D. Efremov, V.A. Volodin, V.A. Sachkov, V.V. Preobrazhenski, B.R. Semyagin, N.N. Ledentsov, V.M. Ustinov, I.P. Soshnikov, D. Litvinov, A. Rosenauer, D. Gerthsen

Journal:

Microelectronics Journal

Année:

2002

Langue:

english

Fichier:

PDF, 546 KB

english, 2002

20

Ostwald ripening in two-dimensional and three-dimensional systems of As clusters in low temperature grown GaAs films

V.V. Chaldyshev, N.A. Bert, V.V. Preobrazhenskii, M.A. Putyato, B.R. Semyagin

Journal:

Materials Science and Engineering: A

Année:

1997

Langue:

english

Fichier:

PDF, 387 KB

english, 1997

21

Computer controlled microwave transient photoconductivity for the nondestructive characterization of GaAs substrates

S.A. Buldygin, S.V. Golod, V.V. Preobrazhenskii, B.P. Semyagin, E.M. Skok, D.G. Tarlo

Journal:

Materials Science and Engineering: B

Année:

1997

Langue:

english

Fichier:

PDF, 487 KB

english, 1997

22

Optical properties of the (3 1 1) oriented GaAs/AlAs superlattices and quantum wire-like structures

A Milekhin, Yu Yanovskii, V Preobrazhenskii, B Semyagin, Yu Pusep, J.C Galzerani

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Année:

1998

Langue:

english

Fichier:

PDF, 109 KB

english, 1998

23

Self-organization of InAs and As quantum dots in GaAs by a combined molecular beam epitaxy process

V. V. Chaldyshev, N. A. Bert, V. N. Nevedomsky, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

Journal:

physica status solidi (c)

Année:

2009

Langue:

english

Fichier:

PDF, 359 KB

english, 2009

24

Structure and properties of epitaxial GaAs and InGaAs films grown by low-temperature molecular-beam epitaxy

I. A. Bobrovnikova, A. I. Veinger, M. D. Vilisova, I. V. Ivonin, L. G. Lavrent'eva, D. I. Lubyshev, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, S. V. Subach, V. V. Chaldyshev, M. P. Yakubeny

Journal:

Russian Physics Journal

Année:

1998

Langue:

english

Fichier:

PDF, 1.04 MB

english, 1998

25

Raman and infrared spectroscopical investigation of the optical vibrational modes in GaSb/AlSb superlattices

A. Milekhin, T. Werninghaus, D.R.T. Zahn, Y. Yanovskii, V. Preobrazhenskii, B. Semyagin, A. Gutakovskii

Journal:

The European Physical Journal B / Condensed Matter and Complex Systems

Année:

1998

Langue:

english

Fichier:

PDF, 339 KB

english, 1998

26

Excess arsenic and point defects in GaAS grown by molecular beam epitaxy at low temperatures

L. G. Lavrent’eva, M. D. Vilisova, I. A. Bobrovnikova, S. E. Toropov, V. V. Preobrazhenskii, B. R. Semyagin, M. A. Putyato, V. V. Chaldyshev

Journal:

Journal of Structural Chemistry

Année:

2004

Langue:

english

Fichier:

PDF, 449 KB

english, 2004

27

Defect formation in LT MBE InGaAs and GaAs

L. L. Anisimova, A. K. Gutakovskii, I. V. Ivonin, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, S. V. Subach

Journal:

Journal of Structural Chemistry

Année:

2004

Langue:

english

Fichier:

PDF, 1.03 MB

english, 2004

28

Influence of the structural surface state on the formation of a relief and morphology of GaAs(001) layers during molecular-beam epitaxy and vacuum annealing

A. V. Vasev, M. A. Putyato, B. R. Semyagin, V. A. Seleznev, V. V. Preobrazhenskii

Journal:

Russian Physics Journal

Année:

2008

Langue:

english

Fichier:

PDF, 1.07 MB

english, 2008

29

Molecular-beam epitaxy of GaAs/Si(001) structures for high-performance tandemAIIIBV/Si-solar energy converters on an active silicon substrate

M. A. Putyato, B. R. Semyagin, E. A. Emel’yanov, N. A. Pakhanov, V. V. Preobrazhenskii

Journal:

Russian Physics Journal

Année:

2011

Langue:

english

Fichier:

PDF, 718 KB

english, 2011

30

Interface structure and growth mode of quantum wire and quantum dot GaAs-AlAs structures on corrugated (311)A surfaces

N. N. Ledentsov, D. Litvinov, A. Rosenauer, D. Gerthsen, I. P. Soshnikov, V. A. Shchukin, V. M. Ustinov, A. Yu. Egorov, A. E. Zukov, V. A. Volodin, M. D. Efremov, V. V. Preobrazhenskii, B. P. Semyagin

Journal:

Journal of Electronic Materials

Année:

2001

Langue:

english

Fichier:

PDF, 1.98 MB

english, 2001

31

Localized optical phonons in GaAs/AlAs superlattices grown on (311)Aand (311)Bsurfaces

A. Milekhin, Yu. Pusep, Yu. Yanovskii, V. Preobrazhenskii, B. Semyagin

Journal:

Physics of the Solid State

Année:

1998

Langue:

english

Fichier:

PDF, 82 KB

english, 1998

32

Donor-acceptor recombination in type-II GaAs/AlAs superlattices

K. S. Zhuravlev, A. M. Gilinskii, T. S. Shamirzaev, V. V. Preobrazhenskii, B. R. Semyagin, M. A. Putyato, S. S. Chipkin

Journal:

Physics of the Solid State

Année:

1998

Langue:

english

Fichier:

PDF, 94 KB

english, 1998

33

High-resolution x-ray diffraction study of InAs-GaAs superlattices grown by molecular-beam epitaxy at low temperature

N. N. Faleev, V. V. Chaldyshev, A. E. Kunitsyn, V. V. Tret’yakov, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

Journal:

Année:

1998

Langue:

english

Fichier:

PDF, 125 KB

english, 1998

34

Effect of isovalent indium doping on excess arsenic in gallium arsenide grown by molecular-beam epitaxy at low temperatures

V. V. Chaldyshev, A. E. Kunitsyn, V. V. Tret’yakov, N. N. Faleev, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

Journal:

Année:

1998

Langue:

english

Fichier:

PDF, 79 KB

english, 1998

35

Indium layers in low-temperature gallium arsenide: Structure and how it changes under annealing in the temperature range 500–700 °C

N. A. Bert, A. A. Suvorova, V. V. Chaldyshev, Yu. G. Musikhin, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, R. Werner

Journal:

Année:

1998

Langue:

english

Fichier:

PDF, 452 KB

english, 1998

36

Accumulation of electrons in GaAs layers grown at low temperatures and containing arsenic clusters

P. N. Brunkov, V. V. Chaldyshev, N. A. Bert, A. A. Suvorova, S. G. Konnikov, A. V. Chernigovskii, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

Journal:

Année:

1998

Langue:

english

Fichier:

PDF, 293 KB

english, 1998

37

Arsenic cluster superlattice in gallium arsenide grown by low-temperature molecular-beam epitaxy

V. V. Chaldyshev, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, N. A. Bert, A. E. Kunitsyn, Yu. G. Musikhin, V. V. Tret’yakov, P. Werner

Journal:

Année:

1998

Langue:

english

Fichier:

PDF, 738 KB

english, 1998

38

Structure and properties of InGaAs layers grown by low-temperature molecular-beam epitaxy

M. D. Vilisova, I. V. Ivonin, L. G. Lavrentieva, S. V. Subach, M. P. Yakubenya, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, N. A. Bert, Yu. G. Musikhin, V. V. Chaldyshev

Journal:

Année:

1999

Langue:

english

Fichier:

PDF, 540 KB

english, 1999

39

Influence of indium doping on the formation of silicon-(gallium vacancy) complexes in gallium arsenide grown by molecular-beam epitaxy at low temperatures

A. E. Kunitsyn, V. V. Chaldyshev, S. P. Vul’, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

Journal:

Année:

1999

Langue:

english

Fichier:

PDF, 56 KB

english, 1999

40

Transverse optical phonon splitting in GaAs/AlAs superlattices grown on the GaAs(311) surface studied by the method of Raman light scattering

V. A. Volodin, M. D. Efremov, V. V. Preobrazhenskii’, B. R. Semyagin, V. V. Bolotov, V. A. Sachkov

Journal:

Année:

2000

Langue:

english

Fichier:

PDF, 87 KB

english, 2000

41

A suite of experimental conditions for photoluminescence monitoring of a heterojunction bipolar transistor structure

K. S. Zhuravlev, T. S. Shamirzaev, V. V. Preobrazhenskii, B. R. Semyagin, V. R. Kostyuchenko

Journal:

Technical Physics

Année:

1997

Langue:

english

Fichier:

PDF, 85 KB

english, 1997

42

Phonon-plasmon interaction in tunneling GaAs/AlAs superlattices

V. A. Volodin, M. D. Efremov, V. V. Preobrazhenskii, B. R. Semyagin, V. V. Bolotov, V. A. Sachkov, E. A. Galaktionov, A. V. Kretinin

Journal:

Année:

2000

Langue:

english

Fichier:

PDF, 82 KB

english, 2000

43

Accumulation of majority charge carriers in GaAs layers containing arsenic nanoclusters

P. N. Brunkov, V. V. Chaldyshev, A. V. Chernigovskii, A. A. Suvorova, N. A. Bert, S. G. Konnikov, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

Journal:

Année:

2000

Langue:

english

Fichier:

PDF, 172 KB

english, 2000

44

Measurements of parameters of the low-temperature molecular-beam epitaxy of GaAs

V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

Journal:

Année:

2002

Langue:

english

Fichier:

PDF, 60 KB

english, 2002

45

Structure of heterointerfaces and photoluminescence properties of GaAs/AlAs superlattices grown on (311)Aand (311)Bsurfaces: Comparative analysis

G. A. Lyubas, N. N. Ledentsov, D. Litvinov, B. R. Semyagin, I. P. Soshnikov, V. M. Ustinov, V. V. Bolotov, D. Gerthsen

Journal:

Année:

2002

Langue:

english

Fichier:

PDF, 138 KB

english, 2002

46

Doping of GaAs layers with Si under conditions of low-temperature molecular beam epitaxy

M. D. Vilisova, A. E. Kunitsyn, L. G. Lavrent’eva, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, S. E. Toropov, V. V. Chaldyshev

Journal:

Année:

2002

Langue:

english

Fichier:

PDF, 67 KB

english, 2002

47

Effect of growth conditions on incorporation of Si into Ga and As sublattices of GaAs during molecular-beam epitaxy

I. A. Bobrovnikova, M. D. Vilisova, I. V. Ivonin, L. G. Lavrent’eva, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, S. V. Subach, S. E. Toropov

Journal:

Année:

2003

Langue:

english

Fichier:

PDF, 80 KB

english, 2003

48

Capacitance study of electron traps in low-temperature-grown GaAs

P. N. Brunkov, A. A. Gutkin, A. K. Moiseenko, Yu. G. Musikhin, V. V. Chaldyshev, N. N. Cherkashin, S. G. Konnikov, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

Journal:

Année:

2004

Langue:

english

Fichier:

PDF, 102 KB

english, 2004

49

A study of recombination centers related to As-Sb nanoclusters in low-temperature grown gallium arsenide

P. N. Brunkov, A. A. Gutkin, Yu. G. Musikhin, V. V. Chaldyshev, N. N. Bert, S. G. Konnikov, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

Journal:

Année:

2005

Langue:

english

Fichier:

PDF, 71 KB

english, 2005

50

Dichroism in transmission of light by an array of self-assembled GaAs quantum wires on a nanofaceted A(311) surface

V. A. Volodin, M. D. Efremov, R. S. Matvienko, V. V. Preobrazhenskii, B. R. Semyagin, N. N. Ledentsov, I. R. Soshnikov, D. Litvinov, A. Rosenauer, D. Gerthsen

Journal:

Physics of the Solid State

Année:

2005

Langue:

english

Fichier:

PDF, 84 KB

english, 2005